熱CVD法を用いたSiO₂薄膜生成実験に関する研究

• 栗原 一浩

  山口大

• 田之上 健一郎

  山口大

書誌事項

タイトル別名

• Study on SiO₂ thin film formation by thermal chemical vapor deposition

抄録

W We have conducted a deposition experiment of SiO₂ film in HMDSO - O₂ - N₂ system using thermal CVD method. The effects of deposition temperature, material concentration, operating pressure and O₂ concentration on growth rate distribution were investigated. In the surface reaction controlled region, the film growth rate distribution continuous in the flow direction was evaluated by using a differential reactor, and created Arrhenius plot. It was found that it was represented by one correlation line regardless of the change of the experimental conditions. In addition, the activation energy was 221 kJ/mol. (9 point, about 100 words)102 words

収録刊行物

• 熱工学コンファレンス講演論文集

  熱工学コンファレンス講演論文集 2018 (0), 0003-, 2018

  一般社団法人 日本機械学会

キーワード

• SiO₂ film
• Thermal CVD
• Rate controlling step
• Activation energy

詳細情報

• CRID: 1390282763110797440
• NII論文ID: 130007637585
• DOI: 10.1299/jsmeted.2018.0003
• ISSN: 2424290X
• Web Site: https://www.jstage.jst.go.jp/article/jsmeted/2018/0/2018_0003/_pdf
• 本文言語コード: ja
• データソース種別:
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  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可