Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots

DOI Web Site 1 Citations 14 References

Abstract

<p>We have fabricated multiple-stacked Si quantum dots (QDs) with and without Ge core embedded in a SiO2 network on n-Si(100) and studied their field electron emission characteristics under DC bias application. For the case of pure Si-QD stacks with different dot-stack numbers, the average electric field in dot-stacked structures at which electron emission current appeared reached minimum value at a stack number of 11. This can be attributed to optimization of the electron emission due to enhanced electric field concentration in the upper layers of the dot-stacked structures and reduction of the electron injection current from the n-Si substrate, with an increased stack number. We also found that, by introducing Ge core into Si-QDs, the average electric field for the electron emission can be reduced below that from pure Si-QDs-stacked structures. This result implies that the electric field is more concentrated in the upper Si-QDs with Ge core layers due to deep potential well for holes in the Ge core.</p>

Journal

  • IEICE Transactions on Electronics

    IEICE Transactions on Electronics E102.C (6), 458-461, 2019-06-01

    The Institute of Electronics, Information and Communication Engineers

Citations (1)*help

See more

References(14)*help

See more

Related Projects

See more

Keywords

Details 詳細情報について

Report a problem

Back to top