Etching Control of HfN Encapsulating Layer for PtHf-Silicide Formation with Dopant Segregation Process

• OHMI Shun-ichiro

  Tokyo Institute of Technology

• TSUKAMOTO Yuya

  Tokyo Institute of Technology

• MAILIG Rengie Mark D.

  Tokyo Institute of Technology

抄録

In this paper, we have investigated the etching selectivity of HfN encapsulating layer for high quality PtHf-alloy silicide (PtHfSi) formation with low contact resistivity on Si(100). The HfN(10 nm)/PtHf(20 nm)/p-Si(100) stacked layer was in-situ deposited by RF-magnetron sputtering at room temperature. Then, silicidation was carried out at 500^°C/20 min in N₂/4.9%H₂ ambient. Next, the HfN encapsulating layer was etched for 1-10 min by buffered-HF (BHF) followed by the unreacted PtHf metal etching. We have found that the etching duration of the 10-nm-thick HfN encapsulating layer should be shorter than 6 min to maintain the PtHfSi crystallinity. This is probably because the PtHf-alloy silicide was gradually etched by BHF especially for the Hf atoms after the HfN was completely removed. The optimized etching process realized the ultra-low contact resistivity of PtHfSi to p⁺/n-Si(100) and n⁺/p-Si(100) such as 9.4×10^-9Ωcm² and 4.8×10^-9Ωcm², respectively, utilizing the dopant segregation process. The control of etching duration of HfN encapsulating layer is important to realize the high quality PtHfSi formation with low contact resistivity.

収録刊行物

• IEICE Transactions on Electronics

  IEICE Transactions on Electronics E102.C (6), 453-457, 2019-06-01

  一般社団法人 電子情報通信学会

キーワード

• PtHf-alloy silicide
• PtHf-alloy target
• selective etching
• contact resistivity
• dopant segregation
• RF magnetron sputtering

詳細情報

• CRID: 1390282763119633664
• NII論文ID: 130007657492
• DOI: 10.1587/transele.2018fup0003
• ISSN: 17451353
• ISSN: 09168524
• Web Site: https://www.jstage.jst.go.jp/article/transele/E102.C/6/E102.C_2018FUP0003/_pdf
• 本文言語コード: en
• データソース種別:
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