Anisotropic sintering shrinkage and microstructural evolution of <i>c</i>-axis-oriented Si₃N₄ ceramics

• TAKAHASHI Takuma

  Kanagawa Institute of Industrial Science and Technology

• TATAMI Junichi

  Kanagawa Institute of Industrial Science and Technology Yokohama National University

• NAKANO Hiromi

  Toyohashi University of Technology

• TANAKA Satoshi

  Nagaoka University of Technology

Abstract

High-thermal-conductivity Si₃N₄ ceramics are desired for substrates in SiC power devices. We successfully fabricated highly c-axis-oriented Si₃N₄ ceramic by casting in a rotating-magnetic field and then sintered using a conventional gas pressure. As a result, the c-axis orientation of Si₃N₄ grains effectively improves the thermal conductivity. The sintering behavior of c-axis-oriented Si₃N₄ ceramics was investigated. The linear shrinkage ratio in the c-axis-oriented direction was smaller than that in the direction normal to the c-axis-oriented direction. Fine c-axis-oriented structures resulted from the orientation of β-Si₃N₄ seeds during the casting because they played as templates controlling the grain growth of β-Si₃N₄ nuclei and inducing the anisotropic sintering shrinkage.

Journal

• Journal of the Ceramic Society of Japan

  Journal of the Ceramic Society of Japan 127 (6), 435-442, 2019-06-01

  The Ceramic Society of Japan

Keywords

• Silicon nitride
• Magnetic field orientation
• Sintering shrinkage
• Thermal conductivity

Details

• CRID: 1390001288141636736
• NII Article ID: 130007658163
• DOI: 10.2109/jcersj2.19023
• ISSN: 13486535
• ISSN: 18820743
• Web Site: https://www.jstage.jst.go.jp/article/jcersj2/127/6/127_19023/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed