Anisotropic sintering shrinkage and microstructural evolution of <i>c</i>-axis-oriented Si<sub>3</sub>N<sub>4</sub> ceramics
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- TAKAHASHI Takuma
- Kanagawa Institute of Industrial Science and Technology
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- TATAMI Junichi
- Kanagawa Institute of Industrial Science and Technology Yokohama National University
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- NAKANO Hiromi
- Toyohashi University of Technology
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- TANAKA Satoshi
- Nagaoka University of Technology
Abstract
<p>High-thermal-conductivity Si3N4 ceramics are desired for substrates in SiC power devices. We successfully fabricated highly c-axis-oriented Si3N4 ceramic by casting in a rotating-magnetic field and then sintered using a conventional gas pressure. As a result, the c-axis orientation of Si3N4 grains effectively improves the thermal conductivity. The sintering behavior of c-axis-oriented Si3N4 ceramics was investigated. The linear shrinkage ratio in the c-axis-oriented direction was smaller than that in the direction normal to the c-axis-oriented direction. Fine c-axis-oriented structures resulted from the orientation of β-Si3N4 seeds during the casting because they played as templates controlling the grain growth of β-Si3N4 nuclei and inducing the anisotropic sintering shrinkage.</p>
Journal
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- Journal of the Ceramic Society of Japan
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Journal of the Ceramic Society of Japan 127 (6), 435-442, 2019-06-01
The Ceramic Society of Japan
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Details 詳細情報について
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- CRID
- 1390001288141636736
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- NII Article ID
- 130007658163
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- ISSN
- 13486535
- 18820743
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- Text Lang
- en
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- Data Source
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- JaLC
- Crossref
- CiNii Articles
- KAKEN
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- Abstract License Flag
- Disallowed