Fabrication of <i>L</i>1<sub>0</sub>-FeNi films by denitriding FeNiN films

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Author(s)

    • Ito K.
    • Institute for Materials Research, Tohoku Univ.|Center for Spintronics Research Network, Tohoku Univ.
    • Mizuguchi M.
    • Institute for Materials Research, Tohoku Univ.|Center for Spintronics Research Network, Tohoku Univ.
    • Takanashi K.
    • Institute for Materials Research, Tohoku Univ.|Center for Spintronics Research Network, Tohoku Univ.

Abstract

<p>  <i>L</i>1<sub>0</sub>-FeNi films textured with the a-axis perpendicular to the film plane were successfully fabricated by denitriding FeNiN films. 20-nm-thick FeNiN films with two variants were epitaxially grown on SrTiO<sub>3</sub>(001), MgAl<sub>2</sub>O<sub>4</sub>(001), and MgO(001) substrates by molecular beam epitaxy. Denitriding was performed by annealing at 300 °C for 4 h under an H<sub>2</sub> gas atmosphere. The epitaxial relationships were <i>L</i>1<sub>0</sub>-FeNi[001](100) || substrate[100](001) and <i>L</i>1<sub>0</sub>-FeNi[010](100) || substrate[100](001). The uniaxial magnetic anisotropy energy (<i>K</i><sub>u</sub>) of the <i>L</i>1<sub>0</sub>-FeNi film was estimated to be 4.4 × 10<sup>6</sup> erg/cm<sup>3</sup> at room temperature by magnetic torque measurement. This <i>K</i><sub>u</sub> value corresponds to a degree of long range order of 0.4.</p>

Journal

  • Journal of the Magnetics Society of Japan

    Journal of the Magnetics Society of Japan 43(4), 79-83, 2019

    The Magnetics Society of Japan

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