An ultra-low power robust CMOS temperature sensor with an inaccuracy of ±0.7°C from −40°C to 85°C

DOI Web Site 被引用文献1件 参考文献10件
  • Hu Yi
    State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University State Grid Key Laboratory of Power Industrial Chip Design and Analysis Technology, Beijing Smart-Chip Microelectronics Technology Co., Ltd.
  • Hou Jiali
    State Grid Key Laboratory of Power Industrial Chip Design and Analysis Technology, Beijing Smart-Chip Microelectronics Technology Co., Ltd.
  • Zhang Jianyun
    State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University
  • Zhang David Wei
    State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University
  • He Yang
    State Grid Key Laboratory of Power Industrial Chip Design and Analysis Technology, Beijing Smart-Chip Microelectronics Technology Co., Ltd.

抄録

<p>An ultra-low power robust CMOS temperature sensor is presented for RFID. The BJT-based sensor employs a calibrated hybrid ADC, which combines a coarse 5-bit SAR conversion with a fine 9-bit delta-sigma conversion. For the purpose of being robust, an error correction method is proposed in this paper, which can calibrate the SAR errors caused by power supply and mismatch. A smart clock generator is also proposed to adapt the change of PTAT bias current, which provides the integrators more settling time in low temperature with low bias current and makes the delta-sigma ADC faster in high temperature to reduce the error caused by leakage. The sensor has been implemented in a 130 nm CMOS process. After a one-point temperature trimming, the sensor has a resolution of 0.015 from −40°C to 85°C, and only consumes 10 µA from 1.5 V supply.</p>

収録刊行物

  • IEICE Electronics Express

    IEICE Electronics Express 16 (16), 20190381-20190381, 2019

    一般社団法人 電子情報通信学会

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