Heteroepitaxial growth of cubic boron nitride (c-BN) thin films by ion-beam-assisted MBE

DOI Web Site
  • HIRAMA Kazuyuki
    NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
  • TANIYASU Yoshitaka
    NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
  • YAMAMOTO Hideki
    NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
  • KUMAKURA Kazuhide
    NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation

Bibliographic Information

Other Title
  • イオンビームアシストMBE法による立方晶BN(c-BN)薄膜のヘテロエピタキシャル成長
  • イオンビームアシスト MBEホウ ニ ヨル リッポウショウ BN(c-BN)ハクマク ノ ヘテロエピタキシャル セイチョウ

Search this article

Abstract

<p>Cubic boron nitride (c-BN) thin films were heteroepitaxially grown on diamond substrates by ion-beam-assisted molecular beam epitaxy (MBE) with independent boron, nitrogen radical and Ar+ ion sources. We demonstrated the structure control of BN films by Ar+ ion irradiation during BN growth. From growth phase diagrams, we show that in addition to V/III > 1 and a growth temperature > 750°C, a proper adjustment of the flux intensity ratio of Ar+ ions to boron atoms is a key for heteroepitaxial growth of c-BN thin films on diamond substrates. At the flux intensity ratio of over 1, sp3-bonded c-BN films can be grown, while at the flux intensity ratio of below 1, sp2-bonded turbostratic BN (t-BN) films are formed.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 85 (4), 306-310, 2016-04-10

    The Japan Society of Applied Physics

Related Projects

See more

Details 詳細情報について

Report a problem

Back to top