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- TAKAHASHI Yasushi
- Department of Electronics Science and Engineering, Osaka Prefecture University
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- OKANO Makoto
- National Institute of Advanced Industrial Science and Technology
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- ASANO Takashi
- Department of Electronic Science and Engineering, Kyoto University
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- NODA Susumu
- Department of Electronic Science and Engineering, Kyoto University
Bibliographic Information
- Other Title
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- 超高<i>Q</i>値シリコンフォトニック結晶光ナノ共振器の進展
- 超高Q値シリコンフォトニック結晶光ナノ共振器の進展
- チョウコウQチ シリコンフォトニック ケッショウ ヒカリ ナノ キョウシンキ ノ シンテン
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Abstract
<p>Photonic crystal nanocavities with high quality factors (Q) have attracted quite a bit of attention from many researchers. Particularly, silicon high-Q nanocavities have increased the record for the highest Q for a photonic crystal cavity over these last 15 years. Currently, silicon nanocavities are studied in various areas for industrial applications. The current record for a Q exceeds 10 million and furthermore, an average value of 2 million has been recently achieved even in the nanocavities fabricated on a large diameter substrate using photolithography. Therefore, silicon nanocavities will be used in a wider range of fields. Here we describe the recent studies for these ultrahigh-Q silicon nanocavities.</p>
Journal
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- Oyo Buturi
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Oyo Buturi 87 (10), 749-753, 2018-10-10
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390564227308747648
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- NII Article ID
- 130007715658
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- NII Book ID
- AN00026679
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- ISSN
- 21882290
- 03698009
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- NDL BIB ID
- 029303519
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- CiNii Articles
- KAKEN
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- Abstract License Flag
- Disallowed