A Raman silicon laser using a photonic crystal nanocavity

• TAKAHASHI Yasushi

  Osaka Prefecture University

Bibliographic Information

Other Title

• シリコンフォトニック結晶による光励起ラマンレーザー発振
• シリコンフォトニック ケッショウ ニ ヨル ヒカリレイキラマンレーザー ハッシン

Abstract

Developing optical amplifiers or lasers in silicon-based materials is an important theme in silicon photonics because it promises to be useful in a wide range of applications. However, the realization has been very difficult because Si has an indirect energy bandgap that shows very low efficiency for radiative electron-hole recombination. Recently, a continuous wave Raman Si laser has been developed, and has attracted much attention. Here we report on a continuous-wave Raman silicon laser using a photonic-crystal high-Q nanocavity, which has a cavity size of less than 10 µm and an unprecedented low threshold of 1 µW.

Journal

• Oyo Buturi

  Oyo Buturi 83 (6), 448-451, 2014-06-10

  The Japan Society of Applied Physics

Keywords

• silicon laser
• Raman scattering
• photonic crystal
• high-Q nanocavity

Details

• CRID: 1390564227312485248
• NII Article ID: 130007718610
• NII Book ID: AN00026679
• DOI: 10.11470/oubutsu.83.6_448
• ISSN: 21882290
• ISSN: 03698009
• NDL BIB ID: 025571117
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I025571117
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed