書誌事項
- タイトル別名
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- Electrical Characteristics of 3.3 kV SiC-MOSFET and Development of Inductive Energy Storage Pulsed Power Generator
- 3.3 kV SiC-MOSFET ノ デンキテキ トクセイ ヒョウカ ト ユウドウセイ パルスパワー デンゲン エ ノ オウヨウ
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<p>Electrical characteristics of a silicon carbide (SiC)-MOSFET with the blocking voltage of 3.3 kV are evaluated, and an inductive energy storage (IES) pulsed power generator driven by the SiC-MOSFET is developed. The experiments are carried out using a circuit consisted of a capacitor and a resistor. The device temperature is controlled using a heater. The maximum pulsed current of 165 A with an input voltage of 80 V, the turn-on time of 31 ns and turn-off time of 22 ns are obtained at room temperature. The turn-on and turn-off times increase with the resistance of the evaluation circuit. On-resistance of 80 mΩ is obtained at room temperature and increases with the device temperature. IES pulsed power generator consists of a capacitor, a pulsed transformer and the SiC-MOSFET used as an opening switch. The maximum output of 9.8 kV and pulse width of 76 ns at the full-width-at-half-maximum are obtained with a charging voltage of 50 V and a charging time of 3 µs.</p>
収録刊行物
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- 電気学会論文誌. A
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電気学会論文誌. A 139 (10), 413-420, 2019-10-01
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390282752340490240
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- NII論文ID
- 130007722270
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- NII書誌ID
- AN10136312
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- ISSN
- 13475533
- 03854205
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- NDL書誌ID
- 030010529
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
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- 使用不可