Sublattice Reversal Epitaxy on High-Index Substrates for Novel Planar-Type Nonlinear Optical Devices

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  • KITADA Takahiro
    Graduate School of Technology, Industrial and Social Sciences, Tokushima University
  • LU Xiangmeng
    Graduate School of Technology, Industrial and Social Sciences, Tokushima University
  • MINAMI Yasuo
    Graduate School of Technology, Industrial and Social Sciences, Tokushima University
  • KUMAGAI Naoto
    National Institute of Advanced Industrial Science and Technology (AIST)
  • MORITA Ken
    Graduate School of Engineering, Chiba University

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Other Title
  • 高指数面上の副格子交換エピタキシーと面型非線形光デバイス
  • コウシスウメン ジョウ ノ フクゴウシ コウカン エピタキシー ト メンガタ ヒセンケイ ヒカリ デバイス

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Abstract

<p>Sublattice reversal has been successfully demonstrated in GaAs-based III-V semiconductors on high-index substrates. A thin layer of Ge was introduced as a group IV material during molecular beam epitaxy of GaAs or AlAs layers on the (113)B- or (113)A-oriented GaAs substrates. The sublattice reversal was realized over the entire wafer area when GaAs/Ga/AlAs system was deposited on the (113)B substrate while it was not realized on the (113)A substrate. On the other hand, the sublattice reversal was completely realized for AlAs/Ga/AlAs system on the (113)A substrate and not on the (113)B substrate. These situations may be explained by self-annihilation of antiphase domains whose boundaries are composed of inclined (111) bond planes. The growth technology of the sublattice reversal epitaxy can be applied to novel kinds of planar-type nonlinear optical devices, which require a polarization-inverted structure in order to satisfy the quasi-phase-matching condition for the second-order nonlinear signal. Here, we will discuss on surface-emitting terahertz devices based on a semiconductor coupled multilayer cavity.</p>

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