Wavelength Dependence of Poly(p-hydroxystyrene) Ablation by Mid-Infrared Free-Electron Laser

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  • Toriumi Minoru
    Laboratory for Interdisciplinary Science and Technology IR FEL Research Center, Research Institute for Science and Technology (RIST), Tokyo University of Science
  • Kawasaki Takayasu
    IR FEL Research Center, Research Institute for Science and Technology (RIST), Tokyo University of Science
  • Araki Mitsunori
    IR FEL Research Center, Research Institute for Science and Technology (RIST), Tokyo University of Science
  • Imai Takayuki
    IR FEL Research Center, Research Institute for Science and Technology (RIST), Tokyo University of Science
  • Tsukiyama Koichi
    IR FEL Research Center, Research Institute for Science and Technology (RIST), Tokyo University of Science Department of Chemistry, Tokyo University of Science

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  • Wavelength Dependence of Poly(<i>p</i>-hydroxystyrene) Ablation by Mid-Infrared Free-Electron Laser

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<p>Ablation of polymer thin films for resists was studied using a mid-Infrared (IR) Free-Electron Laser (FEL). Irradiation fluence of the IR light in the mid-IR region (5.6 to 8.0 μm) to a thin film of poly(p-hydroxystyrene) (PHOST) on a silicon wafer increased to cause PHOST ablation. The ablated spot size was smaller than the irradiated area calculated by wave optics, because the ablation is a multiphoton absorption process. The ablation threshold energy was determined using the irradiation area calculated by the wave optics. The threshold energy depended upon the film thickness of PHOST and irradiation wavelength of FEL. The threshold energy of thin PHOST film with 61 nm increased at the wavelength of vibrational modes of phenyl ring. It associates the durability of phenyl ring to photon decomposition.</p>

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