Relationship between Oxygen Additive Amount and Photoresist Removal Rate Using H Radicals Generated on an Iridium Hot-Wire Catalyst

• Yamamoto Masashi

  Department of Electrical and Computer Engineering, National Institute of Technology, Kagawa College

• Shiroi Tomohiro

  Department of Electrical and Computer Engineering, National Institute of Technology, Kagawa College

• Shikama Tomokazu

  Department of Electrical and Computer Engineering, National Institute of Technology, Kagawa College

• Nagaoka Shiro

  Department of Electronic Systems Engineering, National Institute of Technology, Kagawa College

• Umemoto Hironobu

  Graduate School of Integrated Science and Technology, Shizuoka University Department of Applied Chemistry and Bioengineering, Graduate School of Engineering, Osaka City University

• Horibe Hideo

  Department of Applied Chemistry and Bioengineering, Graduate School of Engineering, Osaka City University

Abstract

We examined an environmentally friendly photoresist removal method using radicals produced by decomposing mixtures of hydrogen and oxygen on a hot iridium catalyst. We earlier reported that the decomposition of photoresists was hastened by adding oxygen gas to a hydrogen flow using a tungsten hot-wire catalyst. The rate increased with the oxygen additive amount up to about 1.0% and then decreased gradually. The decrease is caused by the catalytic poisoning of O atoms on the catalyst surface because of its poor oxidation resistance. In present study, we show that oxygen addition without catalytic poisoning is effective to increase the decomposition rate. The poisoning can be avoided by using an Ir catalyst. The decomposition rate increased with the substrate temperature. The rate also increased rapidly with increasing amounts of added oxygen to 1.0% and then the increase became more gradual. OH radicals must play an important role to hasten the decomposition reactions.

Journal

• Journal of Photopolymer Science and Technology

  Journal of Photopolymer Science and Technology 32 (4), 609-614, 2019-06-24

  The Society of Photopolymer Science and Technology(SPST)

Keywords

• Photoresist
• Removal
• Radical
• Oxygen addition
• Ir hot-wire catalyst

Details

• CRID: 1390564227345558144
• NII Article ID: 130007744433
• NII Book ID: AA11576862
• DOI: 10.2494/photopolymer.32.609
• ISSN: 13496336
• ISSN: 09149244
• NDL BIB ID: 030069661
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I030069661
• Web Site: https://www.jstage.jst.go.jp/article/photopolymer/32/4/32_609/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed