A Comparison of Removal Phenomena in Photoresist Materials Using Laser Irradiation

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  • Kamimura Tomosumi
    Department of Electronics and Information Systems Engineering, Osaka Institute of Technology
  • Nishioka Naoki
    Department of Electronics and Information Systems Engineering, Osaka Institute of Technology
  • Umeda Yuji
    Department of Electronics and Information Systems Engineering, Osaka Institute of Technology
  • Shima Daichi
    Department of Electronics and Information Systems Engineering, Osaka Institute of Technology
  • Funamoto Yusuke
    Department of Electronics and Information Systems Engineering, Osaka Institute of Technology
  • Harada Yoshiyuki
    Nanomaterials and Microdevices Research Center, Osaka Institute of Technology
  • Yoshimura Masashi
    ILE, Osaka University
  • Nakamura Ryosuke
    Science & Technology Entrepreneurship Laboratory, Osaka University
  • Horibe Hideo
    Department of Applied Chemistry and Bioengineering, Graduate School of Engineering, Osaka City University

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Abstract

<p>Resist removal phenomena using laser irradiation were compared in the novolak resist and the PVP. Thresholds for stripping from the Si wafer and damaged at the Si wafer were evaluated for the laser irradiating condition in the normal atmosphere and in the water. The PVP was found to be easy to be stripped as compared with the novolak resist. Only in the water, the photoresist material was completely stripped from the Si wafer surface. The size of the changed area by the laser irradiation for the PVP was approximately 2 times larger than that of the novolak resist. Time-resolved images were also acquired in 400 ns and 7500 ns after the laser irradiation. The scattering condition of the PVP in the removal process was completely different from that of the novolak resist.</p>

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