Quenching bias circuit with current mirror for single photon detection

• Park Himchan

  The Department of Electronic Engineering, Sogang University

• Kim Kyunghoon

  The Department of Electronic Engineering, Sogang University

• Yu Changzhi

  The Department of Electronic Engineering, Sogang University

• Chong Eugene

  The Agency for Defense Development

• Burm Jinwook

  The Department of Electronic Engineering, Sogang University

• Park Byeonghwang

  The Agency for Defense Development

抄録

To minimize the characteristic variation of SPADs (Single-Photon Avalanche Photo Diodes) with bias, a current mirror based quenching bias circuit is implemented and tested for Single Photon Detection. With the proposed quenching bias circuit, the operational bias variation of SPADs is successfully reduced. A SPAD and quenching bias circuit are integrated in a 43 µm × 43 µm area to make a micro pixel. The optimized bias circuit maximizes the photon detection area to have more than 50% fill factor. This paper is based on a 0.18 µm standard CMOS process with thick gate oxide option.

収録刊行物

• IEICE Electronics Express

  IEICE Electronics Express 16 (23), 20190657-20190657, 2019

  一般社団法人 電子情報通信学会

キーワード

• SPAD (Single Photo Avalanche Diode)
• current mirror
• quenching
• fill factor
• operation voltage

詳細情報

• CRID: 1390565134803418368
• NII論文ID: 130007760423
• DOI: 10.1587/elex.16.20190657
• ISSN: 13492543
• Web Site: https://www.jstage.jst.go.jp/article/elex/16/23/16_16.20190657/_pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可