高性能電子源の開発と広がる応用技術

• 長尾 昌善

  産業技術総合研究所

• 村上 勝久

  産業技術総合研究所

書誌事項

タイトル別名

• Development of High-performance Electron Sources and Its Application
• コウセイノウ デンシ ゲン ノ カイハツ ト ヒロガル オウヨウ ギジュツ

抄録

Recent progress of the microfabricated field emitter array (FEA) and the planar type electron source is overviewed. The volcano-structured double-gate FEA is promising for obtaining matrix driven and focused electron beams. The beam half angle less than one degree was achieved by using this structure. High current density of more than 25 A/cm² is also achieved by using nickel-based alloy as an emitter material. A major breakthrough in the field of planar type electron sources is a using graphene as a top electrode in Metal/Oxide/Semiconductor type emitter, which is owing to the development of the direct deposition technique of graphene on insulating material. The emission efficiency of more than 30% is achieved. The graphene/oxide/semiconductor type electron source can emit electrons not only in poor vacuum but also in liquid. This unique feature enables new application, such as hydrogen production using non-electrolyte aqueous solution by injecting low energy electrons.

収録刊行物

• 表面と真空

  表面と真空 63 (1), 7-12, 2020-01-10

  公益社団法人 日本表面真空学会

キーワード

• volcano-structured double-gate field emitter array
• Spindt-type emitter
• planer type electron source
• graphene
• GOS

詳細情報

• CRID: 1390002184862092800
• NII論文ID: 130007784334
• NII書誌ID: AA12808657
• DOI: 10.1380/vss.63.7
• ISSN: 24335843
• ISSN: 24335835
• NDL書誌ID: 030212551
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I030212551
• Web Site: https://www.jstage.jst.go.jp/article/vss/63/1/63_20180478/_pdf
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• 抄録ライセンスフラグ: 使用不可