光導波路のパッシベーションのためのゾルゲルSiO2層表面の改善検討

DOI

書誌事項

タイトル別名
  • Surface Improvement Investigation of Sol-Gel SiO2 Cladding for Waveguide Device Passivation

抄録

<p>For exploiting sol-gel SiO2 for waveguide device passivation, we have investigated the surface condition of sol-gel SiO2 on top of Si, and have confirmed that the main cause of anti-etching property was due to the formation of polymer layer after curing process with 500 ℃ of sol-gel SiO2. To improve the surface condition, plasma-ashing, in addition to 700 ℃ annealing, is proposed. Regular opening of SiO2 layer on Si with etching rate of 1.8 μm/min and sufficient electrical insulation (>10^13 Ω/m) toward proper current induced refractive index change have been successfully confirmed.</p>

収録刊行物

詳細情報 詳細情報について

  • CRID
    1390565134817768448
  • NII論文ID
    130007787940
  • DOI
    10.11527/jceeek.2018.0_402
  • 本文言語コード
    ja
  • データソース種別
    • JaLC
    • CiNii Articles
  • 抄録ライセンスフラグ
    使用不可

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