Effects of Pt Sacrificial Layer on Microfabrication in Layered Bismuth-based Ferroelectric Thin Films

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  • Obayashi Taiki
    Department of Chemical Engineering and Materials Science, Graduate School of Engineering, University of Hyogo
  • Kobune Masafumi
    Department of Chemical Engineering and Materials Science, Graduate School of Engineering, University of Hyogo
  • Matsunaga Takuya
    Department of Chemical Engineering and Materials Science, Graduate School of Engineering, University of Hyogo
  • Ito Ryo
    Department of Chemical Engineering and Materials Science, Graduate School of Engineering, University of Hyogo
  • Migita Tsubasa
    Department of Chemical Engineering and Materials Science, Graduate School of Engineering, University of Hyogo
  • Kikuchi Takeyuki
    Department of Chemical Engineering and Materials Science, Graduate School of Engineering, University of Hyogo
  • Kanda Kensuke
    Department of Electronics and Computer Sciences, Graduate School of Engineering, University of Hyogo
  • Maenaka Kazusuke
    Department of Electronics and Computer Sciences, Graduate School of Engineering, University of Hyogo

Abstract

<p>Ferroelectric microrod films with a pitch size of 5 μm for micropillar-type multiferroic composite devices were fabricated by reactive ion etching (RIE) using epitaxial c-axis-oriented (Bi3.25Nd0.65Eu0.10)Ti3O12 (BNEuT) thin films. The effects of the etching time, the presence of a 155-nm-thick sacrificial Pt layer and the thickness of this layer on the microstructure of the microrod films were examined. It was found that the use of the Pt layer during the RIE process allowed higher dimensional accuracy and straightness of the final microrod films. </p>

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