Inhibition of Electropulsing Nanocrystallization in Amorphous ZrCu under Helium Atmosphere

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Abstract

<p>Nanocrystallization of amorphous ZrCu was induced by applying a pulse current (electropulsing), which exponentially decayed from a certain initial current density (id0) with the time constant of 3 ms. For electropulsing, the ribbon specimen was sandwiched between high-thermal-conductive AlN (thermal conductivity κ = 170 W/m/K at 273 K) plates to remove the Joule heat. Nanocrystallization was found when electropulsing was conducted in a vacuum below 10−2 Pa at the pulse current of id0 ≥ 0.6 GA/m2. In contrast, electropulsing conducted under 105 Pa He (κ = 0.144 W/m/K at 273 K) required id0 above 1.1 GA/m2. Thermal conductivity and heat capacity of 105 Pa He were negligibly smaller than those of the AlN plates. The increase in id0 for nanocrystallization with increasing He pressure indicates that He penetrated the amorphous structure to inhibit the activation of cooperative motions of many atoms and larger id0 is required for nanocrystallization at higher He pressure.</p>

Journal

  • MATERIALS TRANSACTIONS

    MATERIALS TRANSACTIONS 61 (5), 878-883, 2020-05-01

    The Japan Institute of Metals and Materials

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