書誌事項
- タイトル別名
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- Crystal plasticity analysis of the suppression of dislocation accumulation during the production process of semiconductor devices
抄録
<p>High-density memories and high-speed CPUs are usually realized by reduction of the size of semiconductor cells in Large Scale Integrations (LSIs). Representative length scale of Ultra Large Scale Integration (ULSI) cells is going to be in nano-meter order. Dislocation accumulation during the production process in the electron channel of semiconductor device is one of the most serious problems. Dislocation accumulation has an enormous effect on the electronic state of the device. Therefore, the evaluation and suppression of dislocation accumulation are crucially important for the design and development of semiconductor device structure. In this study, we numerically analyze the suppression of dislocation accumulation in the shallow trench isolation type ULSI cells. Accumulation of dislocations is analyzed by employing a technique of crystal plasticity analysis and we evaluate the dislocation density distribution and total length of dislocations in the silicon substrate. Possibilities for the suppression of dislocation accumulation are discussed.</p>
収録刊行物
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- 日本機械学会論文集
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日本機械学会論文集 86 (884), 19-00457-19-00457, 2020
一般社団法人 日本機械学会
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詳細情報 詳細情報について
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- CRID
- 1390285300153275008
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- NII論文ID
- 130007835952
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- ISSN
- 21879761
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可