Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer

• MIYAMOTO Yasuyuki

  Department of Electrical and Electronic Engineering, Tokyo Institute of Technology Institute of Materials and Systems for Sustainability, Nagoya University

• GOTOW Takahiro

  Department of Electrical and Electronic Engineering, Tokyo Institute of Technology

Abstract

In this study, simulations are performed to design an optimal device for thinning the GaN channel layer on the semi-insulating layer in HEMT. When the gate length is 50nm, the thickness of the undoped channel must be thinner than 300nm to observe the off state. When the GaN channel layer is an Fe-doped, an on/off ratio of ~300 can be achieved even with a gate length of 25nm, although the transconductance is slightly reduced.

Journal

• IEICE Transactions on Electronics

  IEICE Transactions on Electronics E103.C (6), 304-307, 2020-06-01

  The Institute of Electronics, Information and Communication Engineers

Keywords

• GaN HEMT
• simulation
• short channel effect
• thin channel

Details

• CRID: 1390848250114634112
• NII Article ID: 130007850075
• DOI: 10.1587/transele.2019fus0002
• ISSN: 17451353
• ISSN: 09168524
• Web Site: https://www.jstage.jst.go.jp/article/transele/E103.C/6/E103.C_2019FUS0002/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed