<i>In-Situ</i> N₂-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering

• OHMI Shun-ichiro

  Tokyo Institute of Technology

• ISHIMATSU Shin

  Tokyo Institute of Technology

• HORIUCHI Yuske

  Tokyo Institute of Technology

• KUDOH Sohya

  Tokyo Institute of Technology

Abstract

We have investigated the in-situ N₂-plasma nitridation for high-k HfN gate insulator formed by electron cyclotron resonance (ECR) plasma sputtering to improve the electrical characteristics. It was found that the increase of nitridation gas pressure for the deposited HfN_1.1 gate insulator, such as 98 mPa, decreased both the hysteresis width in C-V characteristics and leakage current. Furthermore, the 2-step nitiridation process with the nitridation gas pressure of 26 mPa followed by the nitridation at 98 mPa realized the decrease of equivalent oxide thickness (EOT) to 0.9 nm with decreasing the hysteresis width and leakage current. The fabricated metal-insulator-semiconductor field-effect transistor (MISFET) with 2-step nitridation showed a steep subthreshold swing of 87 mV/dec.

Journal

• IEICE Transactions on Electronics

  IEICE Transactions on Electronics E103.C (6), 299-303, 2020-06-01

  The Institute of Electronics, Information and Communication Engineers

Keywords

• high-k
• gate insulator
• interfacial layer
• nitridation
• N₂-plasma
• ECR
• HfN

Details

• CRID: 1390285300161214976
• NII Article ID: 130007850079
• DOI: 10.1587/transele.2019fup0001
• ISSN: 17451353
• ISSN: 09168524
• Web Site: https://www.jstage.jst.go.jp/article/transele/E103.C/6/E103.C_2019FUP0001/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed