High-speed growth of III-V solar cells via hydride vapor phase epitaxy

DOI Web Site 1 Citations
  • OSHIMA Ryuji
    National Institute of Advanced Industrial Science and Technology, Global Zero Emission Research Center
  • SHOJI Yasushi
    National Institute of Advanced Industrial Science and Technology, Global Zero Emission Research Center
  • MAKITA Kikuo
    National Institute of Advanced Industrial Science and Technology, Global Zero Emission Research Center
  • SUGAYA Takeyoshi
    National Institute of Advanced Industrial Science and Technology, Global Zero Emission Research Center

Bibliographic Information

Other Title
  • 化合物半導体の高速成長と太陽電池応用
  • カゴウブツ ハンドウタイ ノ コウソク セイチョウ ト タイヨウ デンチ オウヨウ

Search this article

Abstract

<p>The elevated manufacturing cost of highly efficient III-V multijunction solar cells limits them to space and high-concentration applications. Hydride vapor-phase epitaxy (HVPE) can reduce the manufacturing costs due to the use of cheaper group III metal sources and its high throughput performance. However, producing complex devices with abrupt heterointerfaces using HVPE in a single growth chamber is difficult because in-situ generation of group III metal-chlorides cannot be change abruptly. Here, we developed a custom-built, triple-chamber HVPE that possess high-quality InGaP/GaAs dual-junction solar cells with 21.8% conversion efficiency. In addition, we demonstrated extremely high growth rates of >100µm/h with high material utilization efficiency of 60% for the growth of GaAs and InGaP.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 89 (6), 333-337, 2020-06-10

    The Japan Society of Applied Physics

Citations (1)*help

See more

Details 詳細情報について

Report a problem

Back to top