Magnetic Measurements of Narrow-Gap Semiconductor FeSb₂ under High Pressure

• Deguchi Takuya

  Graduate School of Science and Engineering, Kagoshima University

• Matsubayashi Kazuyuki

  Institute for Solid State Physics, University of Tokyo

• Uwatoko Yoshiya

  Institute for Solid State Physics, University of Tokyo

• Koyama Takehide

  Graduate School of Material Science, University of Hyogo

• Kohara Takao

  Graduate School of Material Science, University of Hyogo

• Nakamura Hiroyuki

  Department of Materials Science and Engineering, Kyoto University

• Mitsui Yoshifuru

  Graduate School of Science and Engineering, Kagoshima University

• Koyama Keiichi

  Graduate School of Science and Engineering, Kagoshima University

Bibliographic Information

Other Title

• Magnetic Measurements of Narrow-Gap Semiconductor FeSb₂ under High Pressure

Abstract

Pressure effects on magnetic susceptibility χ and energy gap E_g⁰ of narrow-gap semiconductor FeSb₂ were investigated for the temperature range of 50–300 K and pressures up to 13 kbar. The estimated E_g⁰ for ambient pressure, E_g0(0), was 29 meV. By application of pressure, χ was suppressed, and E_g0(P) was estimated to be 52 meV for 13 kbar. The fourth-order expansion coefficient γ of the free energy in magnetization was positive and enhanced by applying pressures.

Journal

• MATERIALS TRANSACTIONS

  MATERIALS TRANSACTIONS 61 (8), 1476-1479, 2020-07-01

  The Japan Institute of Metals and Materials

Keywords

• magnetization measurement
• FeSb₂
• energy gap
• pressure effect

Details

• CRID: 1390566775154513152
• NII Article ID: 130007879849
• NII Book ID: AA1151294X
• DOI: 10.2320/matertrans.mt-mn2019015
• ISSN: 13475320
• ISSN: 13459678
• NDL BIB ID: 030541066
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I030541066
• Web Site: https://www.jstage.jst.go.jp/article/matertrans/61/8/61_MT-MN2019015/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed