Structure and electrical properties of Ba₃TaGa₃Si₂O₁₄ single crystals grown by Czochralski method

• USUI Haruki

  School of Materials and Chemical Technology, Tokyo Institute of Technology

• KUSAKABE Hiraku

  School of Materials and Chemical Technology, Tokyo Institute of Technology

• TOKUDA Makoto

  Institute for Materials Research (IMR), Tohoku University

• SUGIYAMA Kazumasa

  Institute for Materials Research (IMR), Tohoku University

• HOSHINA Takuya

  School of Materials and Chemical Technology, Tokyo Institute of Technology

• TSURUMI Takaaki

  School of Materials and Chemical Technology, Tokyo Institute of Technology

• TAKEDA Hiroaki

  School of Materials and Chemical Technology, Tokyo Institute of Technology Graduate School of Science and Engineering, Saitama University

Abstract

Ba₃TaGa₃Si₂O₁₄ (BTGS) bulk single crystals were grown by the Czochralski method. The crystal structure of BTGS has been refined using single-crystal X-ray diffraction data with a precision corresponding to an R index of 0.018. The crystal structure is isostructural to La₃Ga₅SiO₁₄ which has the trigonal space group P321 and Z = 1, and the distribution of each cation is ordered in each site. Material constants and resistivity of the crystal were measured up to 550 °C. The results indicate that the BTGS crystal is a good candidate for piezoelectric applications in elevated temperatures.

Journal

• Journal of the Ceramic Society of Japan

  Journal of the Ceramic Society of Japan 128 (8), 441-446, 2020-08-01

  The Ceramic Society of Japan

Keywords

• Langasite
• Crystal growth
• Crystal structure
• Piezoelectricity
• High temperature

Details

• CRID: 1390848250133733760
• NII Article ID: 130007883940
• DOI: 10.2109/jcersj2.20016
• ISSN: 13486535
• ISSN: 18820743
• Web Site: https://www.jstage.jst.go.jp/article/jcersj2/128/8/128_20016/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed