Universal NBTI Compact Model Replicating AC Stress/Recovery from a Single-shot Long-term DC Measurement

• Hosaka Takumi

  Saitama University

• Nishizawa Shinichi

  Fukuoka University

• Kishida Ryo

  Tokyo University of Science

• Matsumoto Takashi

  Tokyo University

• Kobayashi Kazutoshi

  Kyoto Institute of Technology

抄録

In this paper, a simple and compact Negative Bias Temperature Instability (NBTI) model is proposed. It is based on the reaction-diffusion (tⁿ) and hole-trapping (log(t)) theories. A single shot of DC stress and recovery data is utilized to express duty cycle dependence of NBTI degradation and recovery. Parameter fitting is proceeded by considering that the amount of recovery cannot be larger than stress degradation. The proposed universal model is applied to two types of transistors in different fabrication process technologies, and evaluate its feasibility to show the universality of our proposed model. It replicates stress and recovery successfully with various duty cycles.

収録刊行物

• IPSJ Transactions on System LSI Design Methodology

  IPSJ Transactions on System LSI Design Methodology 13 (0), 56-64, 2020

  一般社団法人 情報処理学会

キーワード

• negative bias temperature instability (NBTI)
• AC stress dependency
• reaction diffusion
• hole trapping

詳細情報

• CRID: 1390566775158999680
• NII論文ID: 130007887399
• DOI: 10.2197/ipsjtsldm.13.56
• ISSN: 18826687
• Web Site: https://www.jstage.jst.go.jp/article/ipsjtsldm/13/0/13_56/_pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
  • KAKEN
• 抄録ライセンスフラグ: 使用不可