Surface-Enhanced Raman Scattering of Graphene on SiC by Gold Nanoparticles

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  • SEKINE Yoshiaki
    NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
  • HIBINO Hiroki
    NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
  • OGURI Katsuya
    NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
  • IWAMOTO Atsushi
    Faculty of Engineering, The University of Tokushima
  • NAGASE Masao
    Faculty of Engineering, The University of Tokushima
  • KAGESHIMA Hiroyuki
    NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
  • SASAKI Kenichi
    NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
  • AKAZAKI Tatsushi
    NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation

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Other Title
  • 金微粒子によるSiC上グラフェンの表面増強ラマン散乱
  • キン ビリュウシ ニ ヨル SiC ジョウ グラフェン ノ ヒョウメン ゾウキョウ ラマン サンラン

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Abstract

The surface-enhanced Raman scattering (SERS) of graphene on SiC with Au nanoparticles makes it possible to identify the spectrum of a buffer layer, which is a non-conductive carbon layer located between graphene and SiC, as well as that of graphene. In conventional Raman scattering spectroscopy, SiC peaks are superimposed on the peaks of the buffer layer and the G peak of graphene, which prevents investigation of the spectra of the buffer layer and graphene. We overcame these issues using the SERS effect and demonstrated that the peak positions of the buffer layer do not change with excitation wavelength. The excitation wavelength dependence of SERS enhancement coincided well with that of absorbance, indicating that an electromagnetic enhancement dominates the SERS effect. Our SERS method paves the way to evaluate the properties of the buffer layer as well as graphene on SiC.

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