Raman Silicon Laser Using a Photonic Crystal Nanocavity

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  • フォトニック結晶ナノ共振器ラマンシリコンレーザー

Abstract

Continuous-wave Raman lasing in the silicon rib waveguide was presented in 2005 as the long-awaited silicon laser. However, the required miniaturization to micrometer dimensions and reduction of the threshold to microwatt energies had not advanced sufficiently since the initial discovery. Such lasers have remained limited to cm-sized cavities with thresholds higher than 20 mW, even with the assistance of reverse-biased p-i-n diodes. In this paper, we have report a continuous-wave Raman silicon laser using a photonic-crystal high-quality (Q) factor nanocavity without any p-i-n diode, which yield a device with a cavity size of less than 10 micrometers and an ultralow threshold of 1 μW. We contrived a unique design of the high-Q nanocavity to bring out the tremendous potential derived from the simple principle that light-matter interactions are proportional to the ratio of Q and the volume of the cavity. Our demonstration represents a milestone in solid-state optics and may pave the way to the construction of practical silicon lasers and amplifiers for large-scale-integration in photonic circuits.

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