YbをドープしたSiクラスレートの作製と熱電特性

  • 辻井 直人
    物質・材料研究機構国際ナノアーキテクトニクス研究拠点

書誌事項

タイトル別名
  • Preparation and Thermoelectric Properties of Yb-doped Si Clathrates
  • Yb オ ドープ シタ Si クラスレート ノ サクセイ ト ネツデントクセイ

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<p>Solubility of Yb to the Si clathrates Ba8Ni3.8Si42.2 and Ba8Cu4.9Si41.1 with the type-I clathrate structure has been studied with polycrystalline samples by the electron micro probe analysis. It is revealed that most of the doped Yb is precipitated as secondary phases and the Yb solubility limit is about 1% of the Ba site or less. Thermoelectric properties of those composite samples are also investigated. Yb-doped samples show lower electrical resistivity and Seebeck coefficient, compared to the pristine compounds. Thermal conductivity increases with the addition of Yb, which is attributed to the increase of the electronic thermal conductivity. Overall thermoelectric figure of merit is not improved for the Ni-system, while a slight enhancement is observed for the Cu-system above 800 K. The best performance is zT = 0.21 for the nominal composition Ba7.8Yb0.2Cu4.9Si41.1 at T = 1000 K.</p>

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