書誌事項
- タイトル別名
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- Mobility Model Parameters of Strained Si by Using a Quantum Drift Diffusion Model
- リョウシ ドリフト カクサン モデル ニ オケル ヒズミ Si ノ イドウド モデルパラメータ ノ ケントウ
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<p>In this study, we have investigated model parameters of a low-field mobility model in the quantum drift diffusion (QDD) model for strained Si channel MOSFETs. Doping dependence of electron mobility in strained Si for different Ge contents in SiGe has been analyzed. The analysis has been performed by changing the Ge contents x from 0 to 0.4 in Si1-xGex. The model parameters of the mobility model are evaluated by comparing with the data calculated by using Monte Carlo method which replicates the experimental data with high accuracy. The effects on the current voltage characteristics for MOSFETs have been simulated by using the QDD model. It is found that the drain current increases as the strain increases and the rate of the increase saturates. The increase ratio of the drain current (at gate voltage is 0.7 V) is 31.0% in the range from x =0 to 0.2 and is only 4.27% in the range from x =0.2 to 0.55.</p>
収録刊行物
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- 電気学会論文誌C(電子・情報・システム部門誌)
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電気学会論文誌C(電子・情報・システム部門誌) 140 (11), 1171-1175, 2020-11-01
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390849376468171520
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- NII論文ID
- 130007934127
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- NII書誌ID
- AN10065950
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- ISSN
- 13488155
- 03854221
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- NDL書誌ID
- 030731832
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
- 使用不可