Deposition of Noble Metal Catalysts on SiC Wafer by Electroless Process
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- FUKUDA Kenji
- Graduate School of Engineering, University of Hyogo
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- FUJII Ryo
- Graduate School of Engineering, University of Hyogo
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- TAKASAKA Yuichi
- Graduate School of Engineering, University of Hyogo
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- YAMADA Naoki
- Graduate School of Engineering, University of Hyogo
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- MATSUMOTO Ayumu
- Graduate School of Engineering, University of Hyogo
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- YAE Shinji
- Graduate School of Engineering, University of Hyogo
Bibliographic Information
- Other Title
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- 無電解プロセスによるSiC基板上への貴金属触媒の析出
- ムデンカイ プロセス ニ ヨル SiC キバン ジョウ エ ノ キキンゾク ショクバイ ノ セキシュツ
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Abstract
<p>Catalyst modification on SiC substrates is a key technology for forming electrodes of power devices by electroless deposition. We deposited noble metals of five kinds on 4H-n-SiC substrates in a mixture solution of metal salt and HF under photoillumination. The metal particle nucleation and growth behavior differed considerably depending on the kind of metal.</p>
Journal
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- Journal of The Surface Finishing Society of Japan
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Journal of The Surface Finishing Society of Japan 71 (12), 839-841, 2020-12-01
The Surface Finishing Society of Japan
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Details 詳細情報について
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- CRID
- 1390849376466263936
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- NII Article ID
- 130007950434
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- NII Book ID
- AN1005202X
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- ISSN
- 18843409
- 09151869
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- NDL BIB ID
- 030806993
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- Abstract License Flag
- Disallowed