書誌事項
- タイトル別名
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- Synthesis of Novel Nitride Semiconductors and Hard Materials Using High-Pressure Metathesis Reaction
- コウアツリョク カフクブンカイ ハンノウ ニ ヨル チッカブツ コウシツ ザイリョウ ト ハンドウタイ ブッシツ ゴウセイ
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抄録
<p>High-pressure metathesis reaction is a promising method for synthesizing novel nitride compounds, e.g. multi-component semiconductors and hard materials. The strong nitridation ability under high pressure makes it possible to realize such compounds. In this article, we introduce our attempts to synthesize 5d nitrides (ReN2, WN and W2.25N3) and ternary nitride semiconductors (ZnSnN2 and MgSnN2) using the metathesis reaction. This method contributes not only to improvement of crystallinity but also to the synthesis of metastable phases. The high-pressure metathesis reaction may open a way for realizing materials designed by data driven computational approach.</p>
収録刊行物
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- 高圧力の科学と技術
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高圧力の科学と技術 30 (3), 195-201, 2020
日本高圧力学会
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詳細情報 詳細情報について
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- CRID
- 1391412881286215296
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- NII論文ID
- 130007976705
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- NII書誌ID
- AN10452913
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- ISSN
- 13481940
- 0917639X
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- NDL書誌ID
- 031296145
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可