SWIR Detection of Front Side Illumination InGaAs PhotoFETs on Si Substrate through Layer Transfer Technology

• OISHI Kazuaki

  Tokyo University of Science AIST

• ISHII Hiroyuki

  AIST

• CHANG Wen-Hsin

  AIST

• SHIMIZU Tetsuji

  AIST

• ISHII Hiroto

  Tokyo University of Science AIST

• FUJISHIRO Hiroki

  AIST

• ENDOH Akira

  AIST

• MAEDA Tatsuro

  Tokyo University of Science AIST

Bibliographic Information

Other Title

• 転写技術を用いたSi基板上の表面照射型InGaAs PhotoFETsによる赤外線検出
• テンシャ ギジュツ オ モチイタ Si キバン ジョウ ノ ヒョウメン ショウシャガタ InGaAs PhotoFETs ニ ヨル セキガイセン ケンシュツ

Abstract

InGaAs photo field-effect transistors (photoFETs) on Si is one of the promising candidates for a high responsivity Short-Wave Infra-Red (SWIR) photodetector toward monolithic integration with Si-LSI. We have demonstrated InGaAs photoFETs integrated on Si through layer transfer technology. According to the scanning transmission electron microscopy (STEM) and Raman measurement, the InGaAs layer was transferred onto Si without the degradation of crystal quality or the introduction of strain. To evaluate the SWIR photosensitivity of InGaAs photoFETs, we derive the spectral responsivity characteristics at a constant incident power from 1000 nm to 1800 nm. It is found that InGaAs photoFETs present higher and broader responsivity than that of InGaAs photodiode in the SWIR region.

Journal

• Vacuum and Surface Science

  Vacuum and Surface Science 64 (2), 74-79, 2021-02-10

  The Japan Society of Vacuum and Surface Science

Keywords

• ingaas
• photofets
• swir
• semiconductor
• layer transfer

Details

• CRID: 1390568617218944128
• NII Article ID: 130007985482
• NII Book ID: AA12808657
• DOI: 10.1380/vss.64.74
• ISSN: 24335843
• ISSN: 24335835
• NDL BIB ID: 031304382
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I031304382
• Web Site: https://www.jstage.jst.go.jp/article/vss/64/2/64_20180682/_pdf
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed