デバイス用基板上SiC単結晶薄膜を用いた超高品質グラフェンと高周波デバイスの廉価な製造法の創出

• 吹留 博一

  東北大学電気通信研究所

書誌事項

タイトル別名

• Creation of Affordable Manufacturing Processes of Ultrahigh-quality Graphene Growth and High-frequency Graphene Devices by Using Single-crystalline SiC Thin Films on Device-type Substrates
• デバイスヨウ キバン ジョウ SiCタンケッショウ ハクマク オ モチイタ チョウコウヒンシツ グラフェン ト コウシュウハ デバイス ノ レンカ ナ セイゾウホウ ノ ソウシュツ

抄録

Graphene is promising for beyond 5G applications with a low environmental load. However, one of the primary challenges in realizing these devices is the scalable growth of high-quality few-layer graphene (FLG) on device-type wafers ; it is difficult to do so while balancing both quality and affordability. We propose a new method for the growth of high-quality FLG on a new template named “hybrid SiC”. The hybrid SiC is produced by bonding a SiC bulk crystal with an affordable device-type wafer and subsequently peeling off the SiC bulk crystal to obtain a single-crystalline SiC thin film on the wafer. The quality of FLG on this hybrid SiC is comparable to that of FLG on SiC bulk crystals. FLG on the hybrid SiC exhibited high carrier mobilities, comparable to those on SiC bulk crystals. Transistors using FLG on the hybrid SiC showed the potential to operate in terahertz frequencies. The proposed method is suited for growing high-quality FLG on desired substrates with the aim of realizing society 5.0 for sustainable development goals.

収録刊行物

• 表面と真空

  表面と真空 64 (7), 318-323, 2021-07-10

  公益社団法人 日本表面真空学会

キーワード

• graphene
• SiC
• affordable cost
• Beyond 5G
• Society 5.0 for SDGs

詳細情報

• CRID: 1390570166646528896
• NII論文ID: 130008064273
• NII書誌ID: AA12808657
• DOI: 10.1380/vss.64.318
• ISSN: 24335843
• ISSN: 24335835
• NDL書誌ID: 031613611
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I031613611
• Web Site: https://www.jstage.jst.go.jp/article/vss/64/7/64_20180746/_pdf
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• 抄録ライセンスフラグ: 使用不可