Selective Etching of Semiconductor Surfaces by Catalytic Activity of Nanocarbon

• MIKURINO Ryo

  Department of Precision Engineering, Graduate School of Engineering, Osaka University

• OGASAWARA Ayumi

  Department of Precision Engineering, Graduate School of Engineering, Osaka University

• KAWAI Kentaro

  Department of Precision Engineering, Graduate School of Engineering, Osaka University

• YAMAMURA Kazuya

  Department of Precision Engineering, Graduate School of Engineering, Osaka University Research Center for Precision Engineering, Graduate School of Engineering, Osaka University

• ARIMA Kenta

  Department of Precision Engineering, Graduate School of Engineering, Osaka University

Bibliographic Information

Other Title

• ナノカーボンの触媒作用に基づく半導体表面の選択エッチング
• ナノカーボン ノ ショクバイ サヨウ ニ モトズク ハンドウタイ ヒョウメン ノ センタク エッチング

Abstract

Catalyst-assisted chemical etching is an emerging technology in the formation of semiconductor surfaces with various structures and functions. Because this etching utilizes chemical reactions, it does not leave mechanical damages on a processed surface. In addition, by controlling solution conditions, a semiconductor surface in contact with a catalyst can be etched selectively, which has a potential to realize surface structures with a high-aspect ratio. In general, precious metals such as Pt and Ag are used as catalysts in this etching mode. In contrast, we propose to use a carbon-based catalyst such as reduced graphene oxide which can be well dispersed in liquid. In this report, we present our recent results on nanocarbon-assisted chemical etching of a Ge surface in water with dissolved oxygen molecules. After showing fundamental properties, we demonstrate to form a trench pattern on Ge by a patterned catalytic film composed of nanocarbons.

Journal

• Vacuum and Surface Science

  Vacuum and Surface Science 64 (8), 352-357, 2021-08-10

  The Japan Society of Vacuum and Surface Science

Keywords

• wet etching
• semiconductor surface
• reduced graphene oxide
• catalyst

Details

• CRID: 1390570465069105152
• NII Article ID: 130008072749
• NII Book ID: AA12808657
• DOI: 10.1380/vss.64.352
• ISSN: 24335843
• ISSN: 24335835
• NDL BIB ID: 031654461
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I031654461
• Web Site: https://www.jstage.jst.go.jp/article/vss/64/8/64_20180755/_pdf
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed