Design of Linearly Substituted Fullerene Bis-Adducts with High Dielectric Constants Based on Theoretical Calculations

DOI PDF 被引用文献2件 参考文献49件
  • Fukashi Matsumoto
    Research Division of Organic Materials, Osaka Research Institute of Industrial Science and Technology, 1-6-50 Morinomiya, Joto-ku, Osaka 536-8553 , Japan
  • Shuhei Sumino
    Research Division of Organic Materials, Osaka Research Institute of Industrial Science and Technology, 1-6-50 Morinomiya, Joto-ku, Osaka 536-8553 , Japan
  • Toshiyuki Iwai
    Research Division of Organic Materials, Osaka Research Institute of Industrial Science and Technology, 1-6-50 Morinomiya, Joto-ku, Osaka 536-8553 , Japan
  • Takatoshi Ito
    Research Division of Organic Materials, Osaka Research Institute of Industrial Science and Technology, 1-6-50 Morinomiya, Joto-ku, Osaka 536-8553 , Japan

抄録

<jats:title>Abstract</jats:title> <jats:p>The low dielectric constants of organic semiconductors, relative to those of inorganic materials, are an intrinsic limitation. Improving the dielectric constant is important for the development of organic electronics. In this study, we established a method for increasing the dielectric constant of fullerene derivatives based on theoretical calculations and cheminformatics. We designed linearly substituted C70 fullerene bis-adducts with two different substituents and investigated the properties of the thin film devices. The bis-adducts had relatively high dielectric constants and moderate electron mobilities. Our study reveals that high-throughput computational screening is an effective strategy for the design of fullerene bis-adducts with high dielectric constants.</jats:p>

収録刊行物

被引用文献 (2)*注記

もっと見る

参考文献 (49)*注記

もっと見る

関連プロジェクト

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ