Atom probe tomography of high-performance Si solar cells

• SHIMIZU Yasuo

  Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science

Bibliographic Information

Other Title

• 高性能Si太陽電池の3次元アトムプローブ解析
• 高性能Si太陽電池の3次元アトムプローブ解析 : 水素検出によるSiヘテロ接合および微結晶粒の可視化へ
• コウセイノウ Si タイヨウ デンチ ノ 3ジゲン アトムプローブ カイセキ : スイソ ケンシュツ ニ ヨル Si ヘテロ セツゴウ オヨビ ビケッショウリュウ ノ カシカ エ
• Towards the visualization of Si heterojunctions and nanocrystallites via hydrogen detection
• 水素検出によるSiヘテロ接合および微結晶粒の可視化へ

Abstract

Atom probe tomography (APT) is a method for obtaining three-dimensional (3D) distributions of elements in materials with nearly atomic-scale resolution. While APT has attracted considerable attention as a promising 3D analysis for various materials and their device structures owing to upgrading the APT system in terms of hardware and software, successful data acquisition relies substantially on a desired preparation of needle-shaped specimens. In this article, technical advances for near-surface analysis on textured (non-flat) samples using a site-specific lift-out method processed with a focused ion beam are provided. As an application of research with APT, the author reviews a trial of the quantification of hydrogen in hydrogenated amorphous Si (a-Si:H) in high-performance Si solar cells and 3D mapping of nanocrystallites embedded in a-Si:H via hydrogen depletion.

Journal

• Oyo Buturi

  Oyo Buturi 90 (10), 610-616, 2021-10-05

  The Japan Society of Applied Physics

Details

• CRID: 1390571106617593216
• NII Article ID: 130008101098
• NII Book ID: AN00026679
• DOI: 10.11470/oubutsu.90.10_610
• ISSN: 21882290
• ISSN: 03698009
• NDL BIB ID: 031761196
• Web Site: http://id.ndl.go.jp/bib/031761196
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I031761196
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed