バイアス電圧で制御する熱流スイッチング素子の創製

• 松永 卓也

  豊田工業大学 大学院先端工学専攻

• 平田 圭佑

  豊田工業大学 大学院先端工学専攻

• Saurabh Singh

  豊田工業大学 大学院先端工学専攻

• 松波 雅治

  豊田工業大学 大学院先端工学専攻

• 竹内 恒博

  豊田工業大学 大学院先端工学専攻

書誌事項

タイトル別名

• A field effect heat flow switching device

抄録

A heat flow switching device was developed using semiconductors characterized by very small lattice thermal conductivity. We selected Ag₂Ch (Ch = S, Se) which possesses semiconducting electron transport properties and very small lattice thermal conductivity, and tried to control their electron thermal conductivity using bias voltage. The samples were prepared by means of self-propagating high-temperature synthesis under vacuum atmosphere, and mechanically rolled into ribbons of 10 μm in thickness. For making the capacitor-type device, amorphous Si and Mo were deposited on the rolled films using RF-sputtering. We compared thermal conductivity with and without bias voltage by means of the AC heating method. As a result, we succeeded in observing a 10 % increase of heat flow in the capacitor type heat flow switching device.

収録刊行物

• 日本熱電学会誌

  日本熱電学会誌 16 (2), 73-76, 2019-10-24

  一般社団法人 日本熱電学会

詳細情報

• CRID: 1390291115030163584
• NII論文ID: 130008159644
• DOI: 10.50972/thermoelectrics.16.2_73
• ISSN: 24365068
• ISSN: 13494279
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • CiNii Articles
  • KAKEN
• 抄録ライセンスフラグ: 使用可