# Tinv Scaling and Gate Leakage Reduction for n-Type Metal Oxide Semiconductor Field Effect Transistor with HfSix/HfO2 Gate Stack by Interfacial Layer Formation Using Ozone–Water-Last Treatment

## 抄録

In this paper, we demonstrate a wet treatment for the HfSix/HfO2 gate stack of n-type metal oxide semiconductor field effect transistor (nMOSFET) fabricated by a gate-last process in order to scale down the electrical thickness at inversion state $T_{\text{inv}}$ value and reduce the gate leakage $J_{\text{g}}$. As a result, we succeeded in scaling down $T_{\text{inv}}$ to 1.41 nm without mobility or $J_{\text{g}}$ degradation by ozone–water-last treatment. We found that a high-density interfacial layer (IFL) is formed owing to the ozone–water-last treatment, and Hf diffusion to the IFL is suppressed, which was analyzed by high-resolution angle-resolved spectroscopy.

## 収録刊行物

• Jpn J Appl Phys

Jpn J Appl Phys 47(4), 2379-2382, 2008-04-25

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

## 各種コード

• NII論文ID(NAID)
150000050262
• 本文言語コード
EN
• 資料種別
特集
• 雑誌種別
大学紀要
• ISSN
0021-4922
• NDL 記事登録ID
9476338
• NDL 雑誌分類
ZM35(科学技術--物理学)
• NDL 請求記号
Z53-A375
• データ提供元
NDL  JSAP

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