Anisotropy in Ultrafast Carrier and Phonon Dynamics in p-Type Heavily Doped Si
We performed time-resolved reflectivity measurements in p-type heavily doped Si under non-resonant excitation. A large contribution from anisotropic state-filling is observed, indicating that the lowered Fermi energy due to the p-type heavy doping enhances the anisotropy in the hole distribution. The initial phase shift of coherent phonons induced by p-type doping is attributed to the anisotropic hole distribution.
- Jpn J Appl Phys
Jpn J Appl Phys 48(10), 100205-100205-3, 2009-10-25
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics