Anisotropy in Ultrafast Carrier and Phonon Dynamics in p-Type Heavily Doped Si

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著者

    • Kato Keiko Kato Keiko
    • NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan
    • Tateno Kouta
    • NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan
    • Tawara Takehiko
    • NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan
    • Gotoh Hideki
    • NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan
    • Kitajima Masahiro
    • Department of Applied Physics, School of Applied Science, National Defense Academy of Japan, Yokosuka, Kanagawa, 239-8686, Japan
    • Nakano Hidetoshi
    • NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan

抄録

We performed time-resolved reflectivity measurements in p-type heavily doped Si under non-resonant excitation. A large contribution from anisotropic state-filling is observed, indicating that the lowered Fermi energy due to the p-type heavy doping enhances the anisotropy in the hole distribution. The initial phase shift of coherent phonons induced by p-type doping is attributed to the anisotropic hole distribution.

収録刊行物

  • Jpn J Appl Phys

    Jpn J Appl Phys 48(10), 100205-100205-3, 2009-10-25

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

各種コード

  • NII論文ID(NAID)
    150000051509
  • NII書誌ID(NCID)
    AA12295836
  • 本文言語コード
    EN
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    10406558
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    NDL  JSAP 
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