Structural, Compositional, and Optical Characterizations of Vertically Aligned AlAs/GaAs/GaP Heterostructure Nanowires Epitaxially Grown on Si Substrate

この論文にアクセスする

この論文をさがす

著者

    • Tateno Kouta Tateno Kouta
    • NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
    • Sogawa Tetsuomi
    • NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
    • Nakano Hidetoshi
    • NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan

抄録

We structurally, compositionally, and optically characterize vertically aligned AlAs/GaAs/GaP heterostructured nanowires (NWs) grown on a Si substrate used for the integration of an optically active material into Si-based technology and its band-gap engineering. The NWs were grown using Au colloidal nanoparticles as catalysts via the vapor–liquid–solid mode. By alternately changing the source material between Ga and Al, we grew GaAs/AlAs/GaAs/AlAs/GaAs NWs with a well-controlled periodic structure and composition on a GaP segment, which was epitaxially grown on a Si substrate. No dislocations induced by the lattice mismatch were found in the GaAs segment of the NWs grown on the GaP segment despite a lattice mismatch of as large as 4%. This is because the NWs have a particular columnar structure with nanoscale diameters and can therefore relax laterally and accommodate a high strain. Stacking faults exist in zinc-blende-structured GaP and GaAs segments, while the AlAs segment has a pure wurtzite crystal structure without any stacking faults. It is found that the stacking fault in III–V NWs is significantly dependent on the stacking fault energy and ionicity. With increasing ionicity, stacking faults can be more easily introduced, and these NWs tend to have a wurtzite crystal structure. In addition, owing to the high surface nonradiative recombination rate resulting from the surface states on the GaAs NW surface, the excitonic emission of photoluminescence from the bare GaAs NW segment has a decay time of as short as 30 ps. With the growth of an AlGaAs capping layer and GaAs outer shell layer, the decay time of the excitonic emission increased 46-fold, indicating an excellent passivation effect on the GaAs segment surface.

収録刊行物

  • Jpn J Appl Phys

    Jpn J Appl Phys 49(1), 015001-015001-6, 2010-01-25

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

各種コード

  • NII論文ID(NAID)
    150000053165
  • NII書誌ID(NCID)
    AA12295836
  • 本文言語コード
    EN
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    10523291
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    NDL  JSAP 
ページトップへ