Ｘｅをスパッタガスとした大飽和磁化Ｂａフェライト膜の作製

• 野間 賢二

  東京工業大学工学部

• 松下 伸広

  東京工業大学工学部

• 中川 茂樹

  東京工業大学工学部

• 直江 正彦

  東京工業大学工学部

書誌事項

タイトル別名

• Ba Ferrite Films with Large Saturation Magnetization Prepared by Using Xe as Sputtering Gas.

抄録

Non-stoichiometric Ba ferrite films were deposited by plasma-free sputtering in the mixture of Xe, Ar, and O₂. By using Xe as sputtering gas, the discrepancy of the film composition and the bombardment of growing surface with energetic particles were sufficiently suppressed, and Ba ferrite films with good c-axis crystallite orientation and large saturation magnetization 4πM_s seemed to be obtained even at substrate temperatures T_s below 600°C. Sintered Ba ferrite plates with non-stoichiometric compositions of BaO·6.5Fe₂O₃ were used as sputtering targets, and the Ba content x and dispersion angle of the c-axis orientation of BaM crystallites corresponded well to the Xe partial pressure P_Xe. The Ba content of films deposited at an optimum P_Xe of 0.10 Pa was almost the same as that of stoichiometric BaM ferrite, and 4πM_S values of 5.1 kG, which is larger than that of bulk BaM ferrite, and 4.7 kG were attained at T_s of 600°C and 475°C, respectively.

収録刊行物

• 日本応用磁気学会誌

  日本応用磁気学会誌 20 (2), 325-328, 1996

  公益社団法人 日本磁気学会

キーワード

• non-stoichiometric Ba ferrite films
• use of Xe as sputtering gas
• Facing Targets Sputtering
• large saturationmagnetization
• low substrate temperature

詳細情報

• CRID: 1390282680070052352
• NII論文ID: 20000346117
• NII書誌ID: AN0031390X
• DOI: 10.3379/jmsjmag.20.325
• COI: 1:CAS:528:DyaK28XivFChurc%3D
• ISSN: 18804004
• ISSN: 02850192
• ISSN: http://id.crossref.org/issn/02850192
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可