Control of Electron and Hole Concentrations in Semiconducting Silicide BaSi₂with Impurities Grown by Molecular Beam Epitaxy

• Michitaka Kobayashi

• Yuta Matsumoto

• Yoshitake Ichikawa

• Dai Tsukada

• Takashi Suemasu

Journal

• Applied Physics Express

  Applied Physics Express 1 051403-, 2008-04-25

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360003446834064384
• NII Article ID: 210000014004
• DOI: 10.1143/apex.1.051403
• ISSN: 18820786
• ISSN: 18820778
• Web Site: http://stacks.iop.org/1882-0786/1/i=5/a=051403/pdf
• Data Source:
  • Crossref
  • CiNii Articles