From Relaxed GeSi Buffers to Field Effect Transistors: Current Status and Future Prospects.

• Xie Ya–Hong

  AT & T Bell Laboratories, Murray Hill, New Jersey 07974, USA

• Fitzgerald Eugene A.

  AT & T Bell Laboratories, Murray Hill, New Jersey 07974, USA

• Monroe Donald

  AT & T Bell Laboratories, Murray Hill, New Jersey 07974, USA

• Watson G. Patrick

  AT & T Bell Laboratories, Murray Hill, New Jersey 07974, USA

• Silverman Paul J.

  AT & T Bell Laboratories, Murray Hill, New Jersey 07974, USA

抄録

We review the current status of relaxed GeSi buffer layers, high-mobility two-dimensional electron and hole gases fabricated on top of these layers, and GeSi-based field effect transistors (FETs). Recent progress in these fields is emphasized. A brief summary is then given for a variety of GeSi-based FET fabrications to date. Finally, the future prospects of GeSi-based FETs to be integrated into Si VLSI production is discussed.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 33 (4B), 2372-2377, 1994

  The Japan Society of Applied Physics

キーワード

• SiGe
• strain
• dislocation
• 2DEG
• 2DHG
• field effect transistor

詳細情報

• CRID: 1390001206246725120
• NII論文ID: 210000035327
• NII論文ID: 130004519928
• DOI: 10.1143/jjap.33.2372
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.33.2372
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.33.2372/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可