The Atomic-Scale Removal Mechanism during Si Tip Scratching on Si and SiO2 Surfaces in Aqueous KOH with an Atomic Force Microscope.

• Katsuki Futoshi

  Corporate Research and Development Laboratories, Sumitomo Metal Industries Limited., 1-8 Fuso-cho, Amagasaki 660-0891, Japan

• Saguchi Akihiko

  Corporate Research and Development Laboratories, Sumitomo Metal Industries Limited., 1-8 Fuso-cho, Amagasaki 660-0891, Japan

• Takahashi Wataru

  Corporate Research and Development Laboratories, Sumitomo Metal Industries Limited., 1-8 Fuso-cho, Amagasaki 660-0891, Japan

• Watanabe Junji

  Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Kumamoto 860-8555, Japan

Bibliographic Information

Other Title

• Atomic Scale Removal Mechanism during Si Tip Scratching on Si and SiO2 Surfaces in Aqueous KOH with an Atomic Force Microscope
• The Atomic-Scale Removal Mechanism during Si Tip Scratching on Si and SiO₂Surfaces in Aqueous KOH with an Atomic Force Microscope

Abstract

The atomic-scale removal mechanism during Si tip scratching on Si wafer or SiO₂ film in aqueous KOH has been examined using an atomic force microscope. We have found that the Si tip removal volume in moles was in good agreement with that of the corresponding Si or SiO₂ specimen. This equality implies that the process begins with formation of the Si-O-Si bridge between one Si atom of the tip and one Si atom or one SiO₂ molecule of the specimen at the wear interface, followed by the local oxidation of the Si surface, and finally the bond rupture by the tip movement, the dimeric silica (OH)₃Si-O-Si(OH)₃, including the Si-O-Si bridge is dissolved in the KOH solution. Comparison of the wear behavior of Si and SiO₂ shows that they are almost the same, indicating that a similar reaction would occur due to the local development of oxide nuclei on the Si surface.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 41 (7B), 4919-4923, 2002

  The Japan Society of Applied Physics

Keywords

• Si
• SiO<FONT SIZE="-1"><SUB>2</SUB></FONT>
• interface
• chemomechanical
• polishing
• nanoscale
• flatness
• atomic force microscope

Details

• CRID: 1390001206256302336
• NII Article ID: 210000051818
• NII Article ID: 110006341638
• NII Book ID: AA10457675
• DOI: 10.1143/jjap.41.4919
• ISSN: 13474065
• ISSN: 00214922
• NDL BIB ID: 6255505
• Web Site: http://id.ndl.go.jp/bib/6255505
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6255505
• Web Site: http://stacks.iop.org/1347-4065/41/i=7S/a=4919/pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed