Structural Properties of Nickel Metal-Induced Laterally Crystallized Silicon Films and Their Improvement Using Excimer Laser Annealing
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- Miyasaka Mitsutoshi
- Seiko Epson Corporation, Technology Platform Research Center
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- Shimoda Tatsuya
- Seiko Epson Corporation, Technology Platform Research Center
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- Makihira Kenji
- Kyushu Institute of Technology, Center for Microelectronics Systems
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- Asano Tanemasa
- Kyushu Institute of Technology, Center for Microelectronics Systems
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- Pecz Béla
- Research Institute For Technical Physics and Material Science
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- Stoemenos John
- Aristotle University of Thessaloniki, Department of Physics
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Structural properties of nickel metal-induced laterally crystallized (Ni-MILC) silicon films are studied in detail mainly using transmission electron microscopy (TEM). Laterally grown crystalline grains can be as large as 17 μm, though the grains consist of small misorientated subgrains and, in addition, some subgrains are divided further into overlapping upper and lower subgrains. The excimer laser annealing (ELA) method definitely improves the Ni-MILC silicon film quality, enlarges the subgrains and removes the overlapping structure. As a result, fairly good polycrystalline silicon (polysilicon) thin film transistors (TFTs) are easily fabricated through a low-temperature process. It is difficult, however, to completely eliminate the subgrains by simply applying the ELA method to Ni-MILC silicon films.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 42 (5A), 2592-2599, 2003
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206255162496
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- NII論文ID
- 130004530780
- 10010715624
- 210000053368
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 6530327
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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