Electron Cyclotron Resonance-Reactive Ion Etching of III-V Semiconductors by Cyclic Injection of CH4/H2/Ar and O2 with Constant Ar Flow

• Haneji Nobuo

  Graduate School of Engineering, Yokohama National University

• Segami Goh

  Graduate School of Engineering, Yokohama National University

• Ide Tomoyoshi

  Graduate School of Engineering, Yokohama National University

• Suzuki Tatsuya

  Graduate School of Engineering, Yokohama National University

• Arakawa Taro

  Graduate School of Engineering, Yokohama National University

• Tada Kunio

  Graduate School of Engineering, Yokohama National University

• Shimogaki Yukihiro

  Graduate School of Engineering, University of Tokyo

• Nakano Yoshiaki

  Graduate School of Engineering, University of Tokyo

Bibliographic Information

Other Title

• Electron Cyclotron Resonance-Reactive Ion Etching of III-V Semiconductors by Cyclic Injection of CH₄/H₂/Ar and O₂with Constant Ar Flow

Abstract

Electron cyclotron resonance-reactive ion etching (ECR-RIE) is very useful for fabricating semiconductor photonic devices and integrated circuits (PICs). The mixture gas of CH₄/H₂ is used for etching III-V semiconductors, but the carbon polymer film deposited on the surface during the etching process presents some problems. Thus, the polymer film must be ashed off using an O₂ plasma. We introduced the cyclic injection of CH₄/H₂/Ar and O₂ to ECR-RIE, and demonstrated that it was very useful for etching of InP. However, compound semiconductors containing Al (e.g., AlGaAs and InAlAs) react with oxygen and an alumina layer is formed, which cannot be etched by CH₄/H₂ etching. Therefore, we used a new cyclic etching process with constant Ar flow in the chamber to remove this alumina layer by Ar ion etching, and obtained good results for etching rate and surface morphology for the compound semiconductors containing Al. We also proposed a suitable combination of three cyclic etching procedures (continuous etching, cyclic etching without constant Ar flow and cyclic etching with constant Ar flow) for etching the multilayer heterostructure of III-V semiconductors including InP and/or compound semiconductors containing Al.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 42 (6B), 3958-3961, 2003

  The Japan Society of Applied Physics

Keywords

• ECR-RIE
• RIE
• compound semiconductor
• cyclic etching

Details

• CRID: 1390001206257153792
• NII Article ID: 210000053700
• NII Article ID: 10011257497
• NII Book ID: AA10457675
• DOI: 10.1143/jjap.42.3958
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/00214922
• NDL BIB ID: 6588064
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6588064
• Web Site: http://stacks.iop.org/1347-4065/42/i=6S/a=3958/pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed