Band Structures of Wurtzite InN and Ga1-xInxN by All-Electron GW Calculation

• Usuda Manabu

  Synchrotron Radiation Research Center, Japan Atomic Energy Research Institute

• Hamada Noriaki

  Department of Physics, Faculty of Science and Technology, Tokyo University of Science

• Shiraishi Kenji

  Institute of Physics, University of Tsukuba

• Oshiyama Atsushi

  Institute of Physics, University of Tsukuba

Bibliographic Information

Other Title

• Band Structures of Wurtzite InN and Ga_1-<i>x</i>In_<i>x</i>N by All-Electron<i>G</i><i>W</i>Calculation

Abstract

The experimentally reported bandgap of wurtzite-type InN dramatically decreased from 1.9 eV to 0.7–0.8 eV very recently. In this paper we report first-principles electronic band-structure calculations of InN by using the all-electron full-potential linearized augmented-plane-wave (FLAPW) method in both local-density approximation (LDA) and GW approximation (GWA), and provide the reliable theoretical bandgap of InN. Our calculation suggests that InN is a narrow-gap semiconductor and strongly supports the recently reported smaller bandgaps. Moreover, we reproduce the bandgap change of Ga_1−xIn_xN ternary alloys as a function of In content x. The present work supports the possibility of bandgap control in the entire range of visible light, using nitrides alone.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 43 (3B), L407-L410, 2004

  The Japan Society of Applied Physics

Keywords

• InN
• bandgap
• GW calculation

Details

• CRID: 1390001206263997824
• NII Article ID: 210000057192
• NII Article ID: 10012705148
• NII Book ID: AA11906093
• DOI: 10.1143/jjap.43.l407
• ISSN: 13474065
• ISSN: 00214922
• NDL BIB ID: 6887506
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6887506
• Web Site: http://stacks.iop.org/1347-4065/43/i=3B/a=L407/pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed