Hydrogenation Effects on Chemical Activity of Defects in Excimer-Laser-Annealed Polycrystalline Silicon Thin Films
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 46 (5L), L448-, 2007-05-01
IOP Publishing
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Details 詳細情報について
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- CRID
- 1360284921830278272
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- NII Article ID
- 210000063960
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- ISSN
- 13474065
- 00214922
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- Data Source
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- Crossref
- CiNii Articles